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CrossRef 25. Moonen PF, Yakimets I, Huskens J: Fabrication of transistors on flexible substrates: from mass-printing to high-resolution alternative lithography strategies. Adv Mater 2012, 24:5526–5541.CrossRef 26. Chang Y, Wang DY, Tai YL, Yang ZG: Preparation, characterization and reaction mechanism of a novel silver-organic conductive VX-770 price ink. J Mater Chem 2012, 22:25296–25301.CrossRef 27. Li Y, Sun H, Chu H: Controlled preparation of inorganic nanostructures on substrates by dip-pen nanolithography. Chem Asian J 2010, 5:980–990.CrossRef 28. Tai YL, Yang ZG, Li ZD: A promising approach to conductive patterns with high efficiency for flexible electronics. Appl Surf Sci 2011, 257:7096–7100.CrossRef 29. Tai

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electronics by direct-writing. J Mater Chem 2011, 21:5938–5943.CrossRef 30. Dearden AL, Smith PJ, Shin DY, Reis N, Derby B, O’Brien P: A low curing temperature silver ink for use in ink-jet printing and subsequent production of conductive tracks. Macromol Rapid Commun 2005, 26:315–318.CrossRef 31. Selleck SP600125 Perelaer J, Smith PJ, Mager D, Soltman D, Volkman SK, Subramanian V, Korvinkdf JG, Schubert US: Printed electronics: the challenges involved in Selleckchem PX-478 printing devices, interconnects, and contacts based on inorganic materials. J Mater Chem 2010, 20:8446–8453.CrossRef 32. Tao Y, Tao YX, Wang L, Wang B, Yang ZG, Tai YL: High-reproducibility, flexible conductive patterns fabricated with silver nanowire by drop or fit-to-flow method. Nanoscale Res Lett 2013, 8:147–152.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions Y-LT synthesized the organic silver conductive ink and discussed the formula. YT, LW, YT, and BW characterized and investigated the properties of the OSC ink. All authors took part in the writing of the manuscript and approved the final manuscript.”
“Background InAs/GaSb type-II superlattices (SLs) are a considerable interest in the application of middle and far infrared photodetection. These structures have broken-gap band alignment, which allows tuning optical and electronic

properties by varying cAMP layer thickness [1, 2]. As the InAs and GaSb share no common atoms (NCA) across the interface (IF), these IFs have to be controlled by both InAs-like, both GaSb-like or alternating InAs- and GaSb-like. Figure 1 illustrates a simplified ball-and-stick model of InAs/GaSb SL with lower GaAs-like and upper InSb-like IFs. This kind of CA/C’A’ zinc blende hetero-structures lost their ideal T d point-group symmetry along the [001] growth direction. C and A represent cation and anion, respectively. If SLs have only one type of IF such as C-A’ or C’-A, it exists a S 4 rotation-reflection axis, the symmetry is described as D 2d point-group symmetry. If SLs have both kinds of IFs alternately, the symmetry depends on the number of atomic monolayer (ML) of each components.

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