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“Background InAs/GaSb type-II superlattices (SLs) are a considerable interest in the application of middle and far infrared photodetection. These structures have broken-gap band alignment, which allows tuning optical and electronic
properties by varying cAMP layer thickness [1, 2]. As the InAs and GaSb share no common atoms (NCA) across the interface (IF), these IFs have to be controlled by both InAs-like, both GaSb-like or alternating InAs- and GaSb-like. Figure 1 illustrates a simplified ball-and-stick model of InAs/GaSb SL with lower GaAs-like and upper InSb-like IFs. This kind of CA/C’A’ zinc blende hetero-structures lost their ideal T d point-group symmetry along the [001] growth direction. C and A represent cation and anion, respectively. If SLs have only one type of IF such as C-A’ or C’-A, it exists a S 4 rotation-reflection axis, the symmetry is described as D 2d point-group symmetry. If SLs have both kinds of IFs alternately, the symmetry depends on the number of atomic monolayer (ML) of each components.