Cheng CH, Chen PC, Wu YH, Yeh FS, Chin A: Long-endurance nanocrystal TiO 2 resistive check details memory using a TaON buffer layer. IEEE Electron Device
Lett 2011, 32:1749.CrossRef 81. Park WY, Kim GH, Seok JY, Kim KM, Song SJ, Lee MH, Hwang CS: A Pt/TiO 2 /Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays. Nanotechnology 2010, 21:195201.CrossRef 82. Lee H-Y, Chen P-S, Wang C-C, Maikap S, Tzeng P-J, Lin C-H, Lee L-S, Tsai M-J: Low-power switching of nonvolatile resistive memory using hafnium oxide. Jpn J Appl Phys, Part 1 2007, 46:2175.CrossRef 83. Lee J, Bourim EM, Lee W, Park J, Jo M, Jung S, Shin J, Hwang H: Effect of ZrO x /HfO x bilayer structure on switching uniformity and reliability in nonvolatile memory applications. Appl Phys Lett 2010, 97:172105.CrossRef
84. Walczyk D, Walczyk C, Schroeder T, Bertaud T, Sowinska M, Lukosius M, Fraschke M, Tillack B, Wenger C: Resistive Ruxolitinib concentration switching characteristics of CMOS embedded HfO 2 -based 1T1R cells. Microelectron Eng 2011, 88:1133.CrossRef 85. Chen YY, Goux L, Clima S, Govoreanu B, Degraeve R, Kar GS, Fantini A, Groeseneken G, Wouters DJ, Jurczak M: Endurance/retention trade-off on HfO 2 /metal cap 1T1R bipolar RRAM. IEEE Trans Electron Devices 2013, 60:1114.CrossRef 86. Yu S, Chen H-Y, Gao B, Kang J, Wong HSP: HfO x -based vertical resistive switching JNK-IN-8 random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. ACS Nano 2013, 7:2320.CrossRef 87. Chen A, Haddad S, Wu YC, Fang TN, Kaza S, Lan Z: Erasing characteristics of Cu 2 O metal-insulator-metal resistive switching memory. Appl Phys Lett 2008, 92:013503.CrossRef these 88. Sun X, Li G, Chen L, Shi Z, Zhang W: Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO 3 /Ti memory cells. Nanoscale Res Lett 2011, 6:1. 89. Lin CY, Wu CY, Wu CYC-Y, Lee TC, Yang FL, Hu C, Tseng TY: Effect of top electrode material
on resistive switching properties of ZrO 2 film memory devices. IEEE Electron Device Lett 2007, 28:366.CrossRef 90. Liu Q, Long S, Wang W, Zuo Q, Zhang S, Chen J, Liu M: Improvement of resistive switching properties in ZrO 2 -based ReRAM with implanted Ti ions. IEEE Electron Device Lett 2009, 30:1335.CrossRef 91. Wang S-Y, Lee D-Y, Tseng T-Y, Lin C-Y: Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO 2 memory films. Appl Phys Lett 2009, 95:112904.CrossRef 92. Wang SY, Lee DY, Huang TY, Wu JW, Tseng TY: Controllable oxygen vacancies to enhance resistive switching performance in a ZrO 2 -based RRAM with embedded Mo layer. Nanotechnology 2010, 21:495201.CrossRef 93. Chien WC, Chen YC, Lai EK, Yao YD, Lin P, Horng SF, Gong J, Chou TH, Lin HM, Chang MN, Shih YH, Hsieh KY, Liu R, Chih-Yuan L: Unipolar switching behaviors of RTO WO x RRAM. IEEE Electron Device Lett 2010, 31:126.CrossRef 94. Lin CY, Wu CY, Hu C, Tseng TY: Bistable resistive switching in Al 2 O 3 memory thin films.