J Appl Phys 2009,106(2):026104.CrossRef 36. Polman A, Jacobson DC, Eaglesham DJ, Kistler RC, Poate JM: Optical doping of waveguide materials by MeV Er implantation. J Appl Phys 1991,70(7):3778.CrossRef 37. Sckerl MW, Guldberg-Kjaer S, Rysholt Poulsen M, Shi P, Chevallier J: Precipitate coarsening and self organization in erbium-doped silica. Phys Rev B 1999,59(21):13494.CrossRef 38. Crowe IF, Kashtiban RJ, Sherliker B, Bangert U, Halsall MP,

Knights AP, Gwilliam RM: Spatially #Belinostat randurls[1|1|,|CHEM1|]# correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal. J Appl Phys 2010,107(4):044316.CrossRef 39. Lu YW, Julsgaard B, Petersen MC, Jensen RVS, Pedersen TG, Pedersen K, Larsen AN: Erbium diffusion in silicon dioxide. Appl Phys Lett 2010,97(14):141903.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions ET and RL carried out the APT sample preparation by SEM-FIB and performed the atom probe analysis and data treatment. ET, LK, and FG wrote the paper. FG, LK, and KH fabricated the sample under investigation and carried out the optical measurements. PP supervised the study and made significant contributions to the structural properties. All authors read and approved the final manuscript.”
“Background Rare-earth

elements are important optical activators for high throughput screening assay luminescent devices. Among various rare-earth luminescent centers, trivalent praseodymium (Pr3+) offers simultaneously a strong emission in the blue, green, orange, and red spectral range, satisfying the complementary color relationship [1, 2]. Consequently, Pr3+-doped glass/crystals are often used as phosphor materials [2, 3]. SiO2-(Ca, Zn)TiO3:Pr3+ phosphors prepared with nanosized silica particles exhibit an intense red photoluminescence (PL) [3]. The Pr3+ emission was achieved for Si-rich SiO2 (SRSO) implanted with Pr3+ ions, but its intensity Resminostat was lower

[4]. Hafnium dioxide (HfO2) and hafnium silicates (HfSiO x ) are currently considered as the predominant high-k dielectric candidates to replace the conventional SiO2 due to the rapid downscaling of the complementary metal-oxide semiconductor (CMOS) transistors [5, 6]. It is ascribable to their good thermal stability in contact with Si, large electronic bandgaps, reasonable conduction band offset in regard to Si, and their compatibility with the current CMOS technology. Our group has first explored the structural and thermal stability of HfO2-based layers fabricated by radio frequency (RF) magnetron sputtering [7, 8] and their nonvolatile memory application [9, 10]. It is worth to note that both HfO2 and HfSiO x matrices have lower phonon frequencies compared to those of SiO2, and as a consequence, both are expected to be suitable hosts for rare-earth activators.