Metal silicides have been widely applied in Si technology as ohmic contacts, low-resistivity interconnects, and Schottky barrier, and they have been introduced into Si nanowires. The most common method for forming silicide/Si nano-heterojunctions

is to drive thermally silicidation of Ni [6–12], Co [13], Pt [14], and Mn [15]. These silicide/Si heterostructured nanowires have been used in nanoscale devices [16]. Large-area silicide/Si heterostructured Apoptosis inhibitor nanowire arrays have the potential to be used in field emission devices [5], gas sensors, or photocatalysts. However, such studies are very rare in previous publications. The phase formation between the metal and Si is critical Stem Cells inhibitor to microelectronics as well as nanoelectronics. Silicide selection is related to many factors, such as temperature of formation, the orientation and size of the Si nanowires, and check details the process of Ni proving [9–11]. This study presents a distinctive method for fabricating large-area Ni-silicide/Si heterostructured nanowire arrays by combining nanosphere lithography, metal-induced catalytic etching, glancing angle deposition, and solid state reaction. A size-dependent phase formation at

the silicide/Si interface was observed, and a mechanism was provided. Methods N-type Si(100) substrates with a resistivity of 1 to 10 Ω cm were cut into 1 × 2 cm2 pieces. Figure  1 shows a schematic illustration of the procedure for the fabrication of Ni-silicide/Si heterostructured nanowire arrays on Si(100) substrates. The substrates were cleaned using the standard RCA (Radio Corporation

of America) procedure and then immersed into boiling solutions of H2SO4:H2O2 = 3:1 for 10 min to form a hydrophilic oxide layer. A close-packed monolayer array of polystyrene (PS) spheres with mean diameter of 202 nm was formed on the substrate by the drop-casting method [17]. The diameter of PS spheres was reduced by O2 plasma, and then, the exposed below oxide layer was removed by Ar plasma. A 20-nm gold thin film was deposited on the patterned substrate. The samples were etched by immersing in the mixture solutions of HF, H2O2 and deionized water (HF = 5 M and H2O2 = 0.176 M) at 50°C for 3 min. An ordered silicon nanowire arrays were achieved after removing the residual PS spheres and gold film by the tetrahydrofuran (THF) and HNO3 solution, respectively. Before being loaded into the deposition chamber, the sample was dipped in a dilute HF solution to remove the oxide layer on the surface. The evaporation beam has a 20° incident angle with respect to the substrate surface. After 100-nm Ni film being deposited on top of Si nanowire arrays, the samples were annealed by rapid thermal annealing at 500°C for 4 min in a forming gas (N2:H2 ratio, 95:5). The unreacted Ni coats were removed by immersing the samples in the HNO3 solution.